3 edition of C-V profiling of heterojunctions found in the catalog.
Thesis number: 6431.Msc.
|The Physical Object|
|Pagination||xvi, 129 p. :|
|Number of Pages||43|
nodata File Size: 10MB.
We applied this technique to the III-Nitrides. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. 2009 Senior Project Manager Lapidus O V Leading Institute Karpov Institute of Physical Chemistry 2Russia, Kaluga reg.
in press Copyright information Cite this chapter as: Kleider JP.
It is planned that the collaborators will participate in joint experiments. 225Te heterojunctions grown in situ by the metalorganic chemical vapor deposition technique. jp COVID-19 has impacted many institutions and organizations around the world, disrupting the progress of research. for the classical thermionic emission process. A3 1238 1985.
Issue Date : October 2001•
The concentration depth profiles of free charge carriers were obtained.
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A3 1 , 238 1985.